English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33742
Title: Emission wavelength engineering of InAs/InP(001) quantum wires
Authors: Fuster, David ; González Sotos, Luisa ; González Díez, Yolanda ; Martínez-Pastor, Juan; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.
Issue Date: 2004
Publisher: Springer
Citation: European Physical Journal B - Condensed Matter 40(4): 433-437 (2004)
Abstract: In this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr either at 1.3 μ m m or 1.55 μ m m at room temperature. We suggest that the role of growth temperature is to modify the As/P exchange at the InAs QWr/InP cap layer interface and consequently the amount of InAs involved in the nanostructure. In this way, due to the enhancement of the As/P exchange, the higher the growth temperature of the cap layer, the smaller in height the InAs quantum wires. Accordingly, the emission wavelength is blue shifted with InP cap layer growth temperature as the electron and hole ground state moves towards higher energies. Optical studies related to the dynamics of carrier recombination and light emission quenching with temperature are also included.
Description: 5 páginas, 5 figuras, 2 tablas.-- PACS. 81.16.Dn Self-assembly – 78.67.Lt Quantum wires – 81.07.Vb Quantum wires.
Publisher version (URL): http://dx.doi.org/10.1140/epjb/e2004-00228-4
URI: http://hdl.handle.net/10261/33742
DOI: 10.1140/epjb/e2004-00228-4
ISSN: 1434-6028
Appears in Collections:(IMM-CNM) Artículos
Files in This Item:
File Description SizeFormat 
epjb_40_433_2004.pdf403,96 kBAdobe PDFThumbnail
Show full item record

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.