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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33734
Title: Different regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wires
Authors: Fuster, David; Martínez-Pastor, Juan; González Sotos, Luisa; González Díez, Yolanda
Issue Date: 2006
Publisher: Institute of Physics Publishing
Citation: Journal of Physics D - Applied Physics 39(23): 4940-4947 (2006)
Abstract: In the present work we study the influence of stacking self-assembled InAs quantum wires (QWRs) on the emission wavelength and the excitonic recombination dynamics. The reduction in the InP spacer layer thickness, d(InP), produces both a size filtering effect towards large wire ensembles and an increase in the vertical coupling for electrons and holes along the stack direction. The different vertical coupling for electrons and holes induces a different behaviour in the exciton recombination dynamics, depending on the InP spacer layer thickness: weak electron coupling and negligible hole coupling for d(InP) > 10 nm, intermediate electron coupling and weak hole coupling for 5 nm ≤ d(InP) ≤ 10 nm and strong electron coupling and moderate hole coupling for d(InP) < 5 nm. Such exciton dynamics have been established by comparing the experimental time decay results with a multi-quantum well model accounting for the vertical carrier coupling.
Description: 8 páginas, 8 figuras.
Publisher version (URL): http://dx.doi.org/10.1088/0022-3727/39/23/007
URI: http://hdl.handle.net/10261/33734
ISSN: 0022-3727
DOI: 10.1088/0022-3727/39/23/007
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