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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33723
Title: A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects
Authors: Molina, Sergio I.; Varela, M.; Ben, Teresa; Sales, D. L.; Pizarro, J.; Galindo, P. L.; Fuster, David; González Díez, Yolanda; González Sotos, Luisa; Pennycook, S. J.
Keywords: Nanowire
Semiconductor nanostructure
High Resolution Z-contrast Imaging
Issue Date: Jul-2008
Publisher: American Scientific Publishers
Citation: Journal of nanoscience and nanotechnology 8(7): 3422-3426 (2008)
Abstract: We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.
Description: 5 páginas, 4 figuras.
Publisher version (URL): http://dx.doi.org/10.1166/jnn.2008.123
URI: http://hdl.handle.net/10261/33723
ISSN: 1533-4880
DOI: 10.1166/jnn.2008.123
Appears in Collections:(IMM-CNM) Artículos
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