Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33714
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Título : Formation of Lateral Low Density In(Ga)As Quantum Dot Pairs in GaAs Nanoholes
Autor : Alonso-González, Pablo, Martín-Sánchez, Javier, González Díez, Yolanda, Alén, Benito, Fuster, David, González Sotos, Luisa
Fecha de publicación : Mar-2009
Editor: American Chemical Society
Citación : Crystal Growth and Design 9(5): 2525-2528 (2009)
Resumen: In this work we present a growth procedure to form lateral In(Ga)As quantum dot pairs by using a low density, 2 × 108 cm−2, GaAs nanohole template previously formed in situ by droplet homoepitaxy. In particular, by changing the arsenic pressure at which InAs is grown on the template, we demonstrate the possibility to select the formation of single quantum dots (QD) or QD pairs inside each of the nanoholes. In the case of QD pairs, the ensemble photoluminescence (PL) as a function of excitation power and temperature reveals spectral signatures typical of laterally coupled nanostructures.
Descripción : 4 páginas, 4 figuras.
Versión del editor: http://dx.doi.org/10.1021/cg900065v
URI : http://hdl.handle.net/10261/33714
ISSN: 1528-7483
DOI: 10.1021/cg900065v
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