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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33714
Title: Formation of Lateral Low Density In(Ga)As Quantum Dot Pairs in GaAs Nanoholes
Authors: Alonso-González, Pablo ; Martín-Sánchez, Javier; González Díez, Yolanda ; Alén, Benito ; Fuster, David ; González Sotos, Luisa
Issue Date: Mar-2009
Publisher: American Chemical Society
Citation: Crystal Growth and Design 9(5): 2525-2528 (2009)
Abstract: In this work we present a growth procedure to form lateral In(Ga)As quantum dot pairs by using a low density, 2 × 108 cm−2, GaAs nanohole template previously formed in situ by droplet homoepitaxy. In particular, by changing the arsenic pressure at which InAs is grown on the template, we demonstrate the possibility to select the formation of single quantum dots (QD) or QD pairs inside each of the nanoholes. In the case of QD pairs, the ensemble photoluminescence (PL) as a function of excitation power and temperature reveals spectral signatures typical of laterally coupled nanostructures.
Description: 4 páginas, 4 figuras.
Publisher version (URL): http://dx.doi.org/10.1021/cg900065v
URI: http://hdl.handle.net/10261/33714
DOI: 10.1021/cg900065v
ISSN: 1528-7483
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