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Open Access item Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Authors:Taboada, A. G.
Sánchez, A. M.
Beltrán, A. M.
Bozkurt, M.
Alonso-Álvarez, D.
Alén, Benito
Rivera, Antonio
Ripalda, José María
Llorens, José Manuel
Martín-Sánchez, Javier
González, Yolanda
Ulloa, J. M.
García, Jorge M.
Molina, Sergio I.
Koenraad, P. M.
Keywords:Semiconductor nanostructures, Quantum dots, Antimony, Structural characterizations
Issue Date:14-Dec-2010
Publisher:American Physical Society
Citation:Physical Review B 82, 235316 (2010)
Abstract:We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
Description:Support by CAM (Projects No. S-505/ENE-310, No.S-505/ESP/000200, and No. S2009ESP-150), by MEC (Project No. TEC2008-06756-C03-01), Consolider-Ingenio 2010 QOIT (Grant No. CSD2006-00019) and GENESIS (Grant No. CSD2006-00004), and by MICINN (FPI grant of AGT) is acknowledged. A.R. thanks the I3P program of CSIC for financial support. A.M.S. would like to thank the Science City Research Alliance and the HEFCE Strategic Development Fund for funding Support.
Publisher version (URL):http://dx.doi.org/10.1103/PhysRevB.82.235316
URI:http://hdl.handle.net/10261/32210
ISSN:0163-1829
Appears in Collections:(IMM-CNM) Artículos

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