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Surface stress effects during MBE growth of III–V semiconductor nanostructures

AuthorsSilveira, Juan Pedro ; García Martínez, Jorge Manuel ; Briones Fernández-Pola, Fernando
KeywordsA1. Interfaces
A1. Low dimensional structures
A1. Nanostructures
A1. Stresses
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
Issue DateJul-2001
CitationJournal of Crystal Growth 227-228: 995-999 (2001)
AbstractSurface and interface stress evolution is measured in situ and in real time during molecular beam epitaxy of InAs/GaAs and GaSb/GaAs systems, covering initial 2D growth, formation of QDs and subsequent GaAs capping. These two systems with very similar lattice parameter mismatch but involving quite different surface chemistry show a similar critical thickness for 2D/3D transition, 0.7–1.0 monolayer ML. Limited In incorporation during InAs/GaAs growth affects the relaxation process. In segregation effects are observed during GaAs overgrowth. GaSb/GaAs system presents a strong 2D/3D relaxation associated with mass transport from the 2D layer. Sb/As exchange reactions are considered.
Description5 páginas, 5 figuras.-- PACS: 81.15.Hi; 85.30.Ww; 62.40.+i; 82.30.Hk.
Publisher version (URL)http://dx.doi.org/10.1016/S0022-0248(01)00966-6
Appears in Collections:(IMN-CNM) Artículos
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