Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32111
Share/Export:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Title

Epitaxial metallic nanostructures on GaAs

AuthorsMartínez Boubeta, Carlos; Menéndez, José Luis CSIC ORCID; Costa Krämer, José Luis CSIC ORCID ; García Martínez, Jorge Manuel CSIC ORCID CVN ; Anguita, José Virgilio CSIC; Bescós, B.; Cebollada, Alfonso CSIC ORCID; Briones Fernández-Pola, Fernando; Chernykh, A. V.; Malikov, I. V.; Mikhailov, G. M.
KeywordsIron
Tungsten
Magnesium oxides
Metal–insulator interfaces
Metal–semiconductor magnetic thin film structures
Epitaxy
Electrical transport measurements
Magnetic phenomena
Issue Date20-Jun-2001
PublisherElsevier
CitationSurface Science 482-485(2): 910-915 (2001)
AbstractHigh quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.
Description6 páginas, 4 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/S0039-6028(01)00728-2
URIhttp://hdl.handle.net/10261/32111
DOI10.1016/S0039-6028(01)00728-2
ISSN0039-6028
Appears in Collections:(IMN-CNM) Artículos

Show full item record
Review this work

SCOPUSTM   
Citations

11
checked on May 23, 2022

Page view(s)

337
checked on May 26, 2022

Google ScholarTM

Check

Altmetric

Dimensions


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.