Quenching and enhancement of high energy luminescence from self assembled InAs/GaAs quantum dots under low external electric fields

Abstract

The effects of external electric field on the photoluminescence (PL) of self assembled InAs/GaAs quantum dots (QDs) have been studied at different temperatures with different energies and power densities of excitation. Photocurrent measurements on the same sample were carried out for additional information on the transitions . The test structure consists of a single layer of InAs QDs with the InAs wetting layer buried in intrinsic GaAs, sandwiched between an n++GaAs at the back and a semitransparent Cr Schottky contact on the top GaAs capping layer. The power of the excitation source for PL measurements was varied in the range of 200-4000 W/cm2, approximately. The results of comparatively low electric fields are to be reported.