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Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots

AuthorsRudamas, C.; Martínez Pastor, Juan Pascual ; García-Cristobal, Alberto; Roussignol, Philippe; García Martínez, Jorge Manuel ; González Sotos, Luisa
KeywordsGallium arsenide
Indium arsenide
Quantum effects
Light scattering
Molecular beam epitaxy
Issue DateJun-2002
CitationSurface Science 507-510: 624-629 (2002)
AbstractIn this work, a study of the relaxation mechanisms in InAs self-assembled quantum dots have been performed by means of photoluminescence (PL), resonant PL (RPL) and PL excitation. The observed phenomenology is different for samples with different InAs coverage. At low InAs coverages, two resonant Raman scattering lines are observed when the excitation energy is chosen inside the emission band. These lines are related to the TO and LO GaAs phonons. Multi-phonon relaxation of carriers (GaAs phonons) is clearly observed in RPL and excitation PL in the lowest InAs coverage sample. Neither such mechanism nor resonant Raman scattering is present in samples with larger InAs coverages, for which the average quantum dot size and areal density remain essentially constant.
Description6 páginas, 3 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/S0039-6028(02)01326-2
Appears in Collections:(IMN-CNM) Artículos
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