Digital.CSIC > Ciencia y Tecnologías Físicas > Instituto de Microelectrónica de Madrid (IMM-CNM) > (IMM-CNM) Artículos >





Closed Access item Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

Authors:Grenier, S.
Letoublon, A.
Proietti, M. G.
Renevier, H.
González, Luisa
García, Jorge M.
Priester, C.
García, J.
Keywords:Semiconductor nanostructures, InAs, Quantum wires, Quantum dots
Issue Date:Jan-2003
Citation:Nuclear Instruments and Methods in Physics Research - Section B 200: 24-33 (2003)
Abstract:We have studied self-organized quantum wires of InAs, grown by molecular beam epitaxy onto a InP(0 0 1) substrate, by means of grazing incidence diffraction anomalous fine structure (DAFS). The equivalent quantum wires thickness is 2.5 monolayers. We measured the (4 4 0) and (4 2 0) GIDAFS spectra, at the As K-edge, keeping the incidence and exit angles close to the InP critical angle. The analysis of both the smooth and oscillatory contributions of the DAFS spectrum, provide valuable information about composition and strain inside the quantum wires and close to the interface. We also show preliminary results on InAs wires encapsulated by a 40 Å thick InP capping layer, suggesting the DAFS capability of probing different iso-strain regions of the wires.
Description:10 páginas, 8 figuras, 1 tabla.-- PACS: 61.10.)I; 61.10.Ht; 68.65.)k.-- Comunicación presentada al E-MRS 2002 Spring Meeting celebrado en Estrasburgo (Francia) del 18 al 21 de Junio de 2002.
Publisher version (URL):http://dx.doi.org/10.1016/S0168-583X(02)01670-1
Appears in Collections:(IMM-CNM) Artículos
(ICMA) Artículos

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.