Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32054
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Título : Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures
Autor : Grenier, S., Letoublon, A., Proietti, M. G., Renevier, H., González Sotos, Luisa, García Martínez, Jorge Manuel, Priester, C., García, J.
Palabras clave : Semiconductor nanostructures
InAs
Quantum wires
Quantum dots
Fecha de publicación : Jan-2003
Editor: Elsevier
Citación : Nuclear Instruments and Methods in Physics Research - Section B 200: 24-33 (2003)
Resumen: We have studied self-organized quantum wires of InAs, grown by molecular beam epitaxy onto a InP(0 0 1) substrate, by means of grazing incidence diffraction anomalous fine structure (DAFS). The equivalent quantum wires thickness is 2.5 monolayers. We measured the (4 4 0) and (4 2 0) GIDAFS spectra, at the As K-edge, keeping the incidence and exit angles close to the InP critical angle. The analysis of both the smooth and oscillatory contributions of the DAFS spectrum, provide valuable information about composition and strain inside the quantum wires and close to the interface. We also show preliminary results on InAs wires encapsulated by a 40 Å thick InP capping layer, suggesting the DAFS capability of probing different iso-strain regions of the wires.
Descripción : 10 páginas, 8 figuras, 1 tabla.-- PACS: 61.10.)I; 61.10.Ht; 68.65.)k.-- Comunicación presentada al E-MRS 2002 Spring Meeting celebrado en Estrasburgo (Francia) del 18 al 21 de Junio de 2002.
Versión del editor: http://dx.doi.org/10.1016/S0168-583X(02)01670-1
URI : http://hdl.handle.net/10261/32054
ISSN: 0168-583X
DOI: 10.1016/S0168-583X(02)01670-1
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