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Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation

AuthorsKarlsson, K. F.; Moskalenko, E. S.; Holtz, P. O.; Monemar, B.; Schoenfeld, W. V.; García Martínez, Jorge Manuel ; Petroff, Pierre M.
KeywordsQuantum effects
Issue Date10-Jun-2003
CitationSurface Science 532-535: 843-847 (2003)
AbstractThe existence of a well-defined threshold energy, crucial for the charging of quantum dots (QDs), positioned between the barrier band gap and the wetting layer ground state is demonstrated. Optical excitation with energies above this threshold populates the QDs with extra electrons. The origin of the threshold is discussed in terms of acceptors in the GaAs barrier.
Description5 páginas, 3 figuras.-- Proceedings of the 7th International Conference on Nanometer-Scale Science and Technology and the 21st European Conference on Surface Science.
Publisher version (URL)http://dx.doi.org/10.1016/S0039-6028(03)00481-3
Appears in Collections:(IMN-CNM) Artículos
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