Please use this identifier to cite or link to this item:
http://hdl.handle.net/10261/32014
Share/Export:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Title: | In segregation effects during quantum dot and quantum ring formation on GaAs(001) |
Authors: | García Martínez, Jorge Manuel CSIC ORCID CVN ; García Martínez, Jorge Manuel CSIC ORCID CVN ; Granados, Daniel CSIC ORCID; Silveira, Juan Pedro CSIC; Briones Fernández-Pola, Fernando CSIC | Keywords: | Quantum dots Quantum ring Molecular beam epitaxy |
Issue Date: | Jan-2004 | Publisher: | Elsevier | Citation: | Microelectronics Journal 35(1): 7-11 (2004) | Abstract: | In segregation during InAs growth on GaAs(001) is studied using a real time, in situ technique capable of measuring sample accumulated stress. A 50% surface In segregation of liquid-like stress free matter is deduced. A picture of growth below critical thickness for quantum dot formation is discussed on the basis of the equilibrium between pseudomorphic InAs and liquid In dominated by the stress energy. Quantum rings are produced when large (>10 nm height) quantum dots are covered with 2 nm of GaAs cap. A formation mechanism of the rings is presented. The possibility of tailoring photoluminescence emission through control over size and shape is demonstrated. | Description: | 5 páginas, 4 figuras.-- PACS: 81.15.Hi; 68.65. þ g; 64.75. þ 75.-- 3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics. | Publisher version (URL): | http://dx.doi.org/10.1016/S0026-2692(03)00212-X | URI: | http://hdl.handle.net/10261/32014 | DOI: | 10.1016/S0026-2692(03)00212-X | ISSN: | 0026-2692 |
Appears in Collections: | (IMN-CNM) Artículos |
Show full item record
CORE Recommender
SCOPUSTM
Citations
15
checked on Apr 6, 2024
WEB OF SCIENCETM
Citations
14
checked on Feb 29, 2024
Page view(s)
406
checked on Apr 19, 2024
Google ScholarTM
Check
Altmetric
Altmetric
WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.