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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32014
Title: In segregation effects during quantum dot and quantum ring formation on GaAs(001)
Authors: García Martínez, Jorge Manuel ; Granados, Daniel ; Silveira, Juan Pedro ; Briones Fernández-Pola, Fernando
Keywords: Quantum dot
Quantum ring
Molecular beam epitaxy
Issue Date: Jan-2004
Publisher: Elsevier
Citation: Microelectronics Journal 35(1): 7-11 (2004)
Abstract: In segregation during InAs growth on GaAs(001) is studied using a real time, in situ technique capable of measuring sample accumulated stress. A 50% surface In segregation of liquid-like stress free matter is deduced. A picture of growth below critical thickness for quantum dot formation is discussed on the basis of the equilibrium between pseudomorphic InAs and liquid In dominated by the stress energy. Quantum rings are produced when large (>10 nm height) quantum dots are covered with 2 nm of GaAs cap. A formation mechanism of the rings is presented. The possibility of tailoring photoluminescence emission through control over size and shape is demonstrated.
Description: 5 páginas, 4 figuras.-- PACS: 81.15.Hi; 68.65. þ g; 64.75. þ 75.-- 3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics.
Publisher version (URL): http://dx.doi.org/10.1016/S0026-2692(03)00212-X
URI: http://hdl.handle.net/10261/32014
DOI: 10.1016/S0026-2692(03)00212-X
ISSN: 0026-2692
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