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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/31997
Title: Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings
Authors: Ben, Teresa; Sánchez, A. M.; Molina, Sergio I.; Granados, Daniel ; García Martínez, Jorge Manuel ; Kret, S.
Issue Date: 2005
Publisher: Springer
Citation: Microscopy of Semiconducting Materials: 271-274 (2005)
Series/Report no.: Springer Proceedings in Physics
Abstract: The strain and composition distributions of InAs/GaAs(001) stacked self-assembled quantum rings (QRs) grown by MBE have been analyzed. Transmission electron microscopy (TEM) images revealed a high degree of vertical arrangement of quantum rings for samples spaced by a GaAs spacer layer thickness ts < 6 nm. The peak finding method was applied to high resolution transmission electron micrographs in order to plot strain maps, revealing that the higher strained areas were in the ring core and close to it. The existence of another layer with similar strain to the wetting layer was also clear from the peak finding strain analysis. The transverse compositional profiles taken from 002 DF TEM images show the existence of In-rich regions within the nano-rings and an In(Ga)As well defined layer surrounding them, which is formed during the growth process.
Description: 4 páginas, 4 figuras.-- Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK.-- A. G. Cullis and J. L. Hutchison (eds.).
Publisher version (URL): http://dx.doi.org/10.1007/3-540-31915-8_56
URI: http://hdl.handle.net/10261/31997
DOI: 10.1007/3-540-31915-8_56
ISBN: 978-3-540-31914-6
ISSN: 0930-8989
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