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Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings

AuthorsBen, Teresa; Sánchez, A. M.; Molina, Sergio I.; Granados, Daniel ; García Martínez, Jorge Manuel ; Kret, S.
Issue Date2005
CitationMicroscopy of Semiconducting Materials: 271-274 (2005)
SeriesSpringer Proceedings in Physics
AbstractThe strain and composition distributions of InAs/GaAs(001) stacked self-assembled quantum rings (QRs) grown by MBE have been analyzed. Transmission electron microscopy (TEM) images revealed a high degree of vertical arrangement of quantum rings for samples spaced by a GaAs spacer layer thickness ts < 6 nm. The peak finding method was applied to high resolution transmission electron micrographs in order to plot strain maps, revealing that the higher strained areas were in the ring core and close to it. The existence of another layer with similar strain to the wetting layer was also clear from the peak finding strain analysis. The transverse compositional profiles taken from 002 DF TEM images show the existence of In-rich regions within the nano-rings and an In(Ga)As well defined layer surrounding them, which is formed during the growth process.
Description4 páginas, 4 figuras.-- Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK.-- A. G. Cullis and J. L. Hutchison (eds.).
Publisher version (URL)http://dx.doi.org/10.1007/3-540-31915-8_56
Appears in Collections:(IMN-CNM) Libros y partes de libros
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