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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/31968
Title: (InP)5/(Ga0.47In0.53As)4 short-period superlattices waveguides for InAs quantum wires lasers
Authors: Suárez Arias, Ferrán; Fuster, David; González Sotos, Luisa; González Díez, Yolanda; García Martínez, Jorge Manuel; Dotor, María Luisa
Keywords: A1. Low-dimensional structures
A1. Nanostructures
A3. Molecular beam epitaxy
A3. Superlattices
B2. Semiconducting III–V materials
B3. Laser diodes
Issue Date: 1-Aug-2007
Publisher: Elsevier
Citation: Journal of Crystal Growth 306(1): 16-21 (2007)
Abstract: Waveguides formed by (InP)5/(Ga0.47In0.53As)4 short-period superlattices (SPSL) have been grown and characterized for their use as waveguides in InAs self-assembled quantum wires (QWR) lasers. Atomic force microscopy has been used to characterize both the SPSL and the QWR morphology quality. It is demonstrated that the shape of the QWR strongly depends on the roughness of the SPSL surface and that an atomically flat surface is necessary to obtain a uniform QWR size and shape morphology. Photoluminescence (PL) spectroscopy is also employed as a feedback to achieve the optimum growth parameters in order to obtain high-quality QWR confined by SPSL.
Description: 6 páginas, 4 figuras, 1 tabla.-- PACS: 42.55.Px; 73.21.Cd; 73.21.Hb.
Publisher version (URL): http://dx.doi.org/10.1016/j.jcrysgro.2007.04.059
URI: http://hdl.handle.net/10261/31968
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.04.059
Appears in Collections:(IMM-CNM) Artículos
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