Digital.CSIC > Ciencia y Tecnologías Físicas > Instituto de Microelectrónica de Madrid (IMM-CNM) > (IMM-CNM) Artículos >





Closed Access item (InP)5/(Ga0.47In0.53As)4 short-period superlattices waveguides for InAs quantum wires lasers

Authors:Suárez, Ferran
Fuster, David
González, Luisa
González, Yolanda
García, Jorge M.
Dotor, María Luisa
Keywords:A1. Low-dimensional structures, A1. Nanostructures, A3. Molecular beam epitaxy, A3. Superlattices, B2. Semiconducting III–V materials, B3. Laser diodes
Issue Date:1-Aug-2007
Citation:Journal of Crystal Growth 306(1): 16-21 (2007)
Abstract:Waveguides formed by (InP)5/(Ga0.47In0.53As)4 short-period superlattices (SPSL) have been grown and characterized for their use as waveguides in InAs self-assembled quantum wires (QWR) lasers. Atomic force microscopy has been used to characterize both the SPSL and the QWR morphology quality. It is demonstrated that the shape of the QWR strongly depends on the roughness of the SPSL surface and that an atomically flat surface is necessary to obtain a uniform QWR size and shape morphology. Photoluminescence (PL) spectroscopy is also employed as a feedback to achieve the optimum growth parameters in order to obtain high-quality QWR confined by SPSL.
Description:6 páginas, 4 figuras, 1 tabla.-- PACS: 42.55.Px; 73.21.Cd; 73.21.Hb.
Publisher version (URL):http://dx.doi.org/10.1016/j.jcrysgro.2007.04.059
Appears in Collections:(IMM-CNM) Artículos

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.