Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/31966
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Title

Temperature dependent optical properties of stacked InGaAs/GaAs quantum rings

AuthorsOuerghui, W.; Martínez Pastor, Juan Pascual; Gomis, J.; Maaref, M. A.; Granados, Daniel CSIC ORCID; García Martínez, Jorge Manuel CSIC ORCID CVN
KeywordsQuantum rings
Vertical stacks
Time resolved photoluminescence
Issue Date1-Jul-2008
PublisherElsevier
CitationMaterials Science and Engineering - C 28(5-6): 887-890 (2008)
AbstractIn this paper we describe the results of temperature dependent photoluminescence intensity and decay time measurements of In(Ga)As/GaAs quantum rings where the depth of barrier is varied from sample to sample. The activation energy found for the reduction of the exciton decay time as a function of the temperature is approximately half the value of the thermionic escape energy of excitons. The temperature dependant behaviour is ascribed to the carriers lost via the excited state to the WL. The time resolved PL study indicates that thermal escape mechanisms is not so affected by reducing the spacer thickness, but it's influenced essentially by the excited state recombination.
Description4 páginas, 3 figuras, 2 tablas.-- MADICA 2006 Conference, Fifth Maghreb-Europe Meeting on Materials and their Applicatons for Devices and Physical, Chemical and Biological Sensors
Publisher version (URL)http://dx.doi.org/10.1016/j.msec.2007.10.029
URIhttp://hdl.handle.net/10261/31966
DOI10.1016/j.msec.2007.10.029
ISSN0928-4931
Appears in Collections:(IMN-CNM) Artículos

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