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Origin of Room Temperature Magnetism in Thin (ZnO)1-x(MnO2)x Films and ZnO/MnO2 Multilayers

AuthorsLópez-Ponce, Enrique ; Wennberg, A.; Martín-González, Marisol; Costa Krämer, José Luis ; García, Miguel Ángel Pérez; Quesada, Adrián ; Hernando, Antonio ; Caballero Cuesta, Amador ; Villegas, Marina; Fernández Lozano, José Francisco
KeywordsPowder-solid state reaction
Magnetic properties
Room temperature ferromagnetic semiconductors
Diluted magnetic semiconductor
Issue Date2006
PublisherJapanese Society of Applied Physics
CitationJapanese Journal of Applied Physics 45: 7667-7671 (2006)
AbstractThe reactivity of the Zn–Mn–O system prepared by conventional ceramic routes using ZnO and MnO2 as starting materials and in thin film form by pulsed-laser deposition is described and correlated with the system's magnetic response. Structural analysis is performed using X-ray diffraction analysis, X-ray photoelectron spectroscopy and Raman spectroscopy. The ferromagnetic phase is determined to be due to the presence of both Mn+3 and Mn+4 ions at the Zn diffusion front of the manganese oxide grain. Thus, it is demonstrated that Mn is not incorporated into the ZnO lattice, but that Zn diffuses into manganese oxide grains. Zn diffusion delays the total manganese reduction, i.e., Mn+4→Mn+3. At the diffusion front both manganese ions coexist and their spins couple ferromagnetically through a double-exchange mechanism. This mechanism explains the origin of the room-temperature ferromagnetism that has been recently discovered in the Zn–Mn–O system, and suggests that it is a unique and promising material for spintronic devices.
Description5 páginas.
Publisher version (URL)http://dx.doi.org/10.1143/JJAP.45.7667
Appears in Collections:(IMN-CNM) Artículos
(ICV) Artículos
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