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http://hdl.handle.net/10261/31212
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Alonso-González, Pablo | - |
dc.contributor.author | Martín-González, Marisol | - |
dc.contributor.author | Martín-Sánchez, Javier | - |
dc.contributor.author | González Díez, Yolanda | - |
dc.contributor.author | González Sotos, Luisa | - |
dc.date.accessioned | 2011-01-14T10:19:49Z | - |
dc.date.available | 2011-01-14T10:19:49Z | - |
dc.date.issued | 2006-09 | - |
dc.identifier.citation | Journal of Crystal Growth 294(2): 168-173 (2006) | es_ES |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10261/31212 | - |
dc.description | 6 páginas, 6 figuras.-- PACS: 81.05.Ea; 81.15.Hi; 85.40.Hp | es_ES |
dc.description.abstract | In this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel alumina (NCA) mask and transferring its self-ordering to the underlying GaAs substrate by continuing the anodization process once the GaAs surface is reached. After patterning, the GaAs substrate follows a low temperature process for surface preparation before epitaxial growth for QD formation. As a final result, we observe that the nanoholes act as preferential nucleation sites for InAs QD formation, with a filling factor close to unity, while the QD formation on the surface region between the pattern holes is completely suppressed. | es_ES |
dc.description.sponsorship | This work was financed by Spanish MEC under NANOSELF II project (TEC2005-05781-C03-01), NANOCOMIC project (CAM S 0505ESP 0200) and by the SANDIE Network of excellence (Contract no. NMP4-CT- 2004-500101 group TEP-0120). M.S. Martín-González thanks to the Ramón y Cajal programme. P. Alonso- González and J. Martín-Sánchez thanks to European Community for a fellowship under the Programme I3PCSIC. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Elsevier | es_ES |
dc.rights | closedAccess | es_ES |
dc.subject | A1. Nanostructures | es_ES |
dc.subject | A1. Patterned substrates | es_ES |
dc.subject | A3. Molecular beam epitaxy | es_ES |
dc.subject | A3. Quantum dots | es_ES |
dc.subject | B2. Semiconducting III-IV materials | es_ES |
dc.title | Ordered InAs QDs using prepatterned substrates by monolithically integrated porous alumina | es_ES |
dc.type | artículo | es_ES |
dc.identifier.doi | 10.1016/j.jcrysgro.2006.06.012 | - |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1016/j.jcrysgro.2006.06.012 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.fulltext | No Fulltext | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
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