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Ordered InAs QDs using prepatterned substrates by monolithically integrated porous alumina

AuthorsAlonso-González, Pablo ; Martín-González, Marisol; Martín-Sánchez, Javier; González Díez, Yolanda ; González Sotos, Luisa
KeywordsA1. Nanostructures
A1. Patterned substrates
A3. Molecular beam epitaxy
A3. Quantum dots
B2. Semiconducting III-IV materials
Issue DateSep-2006
CitationJournal of Crystal Growth 294(2): 168-173 (2006)
AbstractIn this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel alumina (NCA) mask and transferring its self-ordering to the underlying GaAs substrate by continuing the anodization process once the GaAs surface is reached. After patterning, the GaAs substrate follows a low temperature process for surface preparation before epitaxial growth for QD formation. As a final result, we observe that the nanoholes act as preferential nucleation sites for InAs QD formation, with a filling factor close to unity, while the QD formation on the surface region between the pattern holes is completely suppressed.
Description6 páginas, 6 figuras.-- PACS: 81.05.Ea; 81.15.Hi; 85.40.Hp
Publisher version (URL)http://dx.doi.org/10.1016/j.jcrysgro.2006.06.012
Appears in Collections:(IMN-CNM) Artículos
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