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dc.contributor.authorRomero, M. F.-
dc.contributor.authorSanz, M.M.-
dc.contributor.authorTanarro, Isabel-
dc.contributor.authorJiménez, A.-
dc.contributor.authorMuñoz, E.-
dc.date.accessioned2010-12-20T09:37:57Z-
dc.date.available2010-12-20T09:37:57Z-
dc.date.issued2010-11-23-
dc.identifier.citationJournal of Physics D: Applied Physics 43,495202 (2010)es_ES
dc.identifier.issnISSN: 0022-3727-
dc.identifier.urihttp://hdl.handle.net/10261/30614-
dc.description8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.Tves_ES
dc.description.abstractIn this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been analysed by mass spectrometry as a function of the NH3/SiH4 flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.es_ES
dc.description.sponsorshipThis work was supported in part by the KORRIGAN project (EDA—04/102.052/032 CA 2157v7) and in part by the projects ICTS-2007-05, MAT2007-65965, FIS 2007-61686 and CSD2009-00038 of the MICINN of Spain.es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.rightsopenAccesses_ES
dc.subjectElectronics and deviceses_ES
dc.subjectSemiconductorses_ES
dc.subjectInstrumentation and measurementes_ES
dc.subjectSurfaces, interfaces and thin filmses_ES
dc.subjectPlasma physicses_ES
dc.titlePlasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour depositiones_ES
dc.typeartículoes_ES
dc.identifier.doi10.1088/0022-3727/43/49/495202-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1088/0022-3727/43/49/495202es_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
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