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Título

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

AutorRomero, M. F.; Sanz, M.M. CSIC ORCID; Tanarro, Isabel CSIC ORCID ; Jiménez, A.; Muñoz, E.
Palabras claveElectronics and devices
Semiconductors
Instrumentation and measurement
Surfaces, interfaces and thin films
Plasma physics
Fecha de publicación23-nov-2010
EditorInstitute of Physics Publishing
CitaciónJournal of Physics D: Applied Physics 43,495202 (2010)
ResumenIn this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been analysed by mass spectrometry as a function of the NH3/SiH4 flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.
Descripción8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.Tv
Versión del editorhttp://dx.doi.org/10.1088/0022-3727/43/49/495202
URIhttp://hdl.handle.net/10261/30614
DOI10.1088/0022-3727/43/49/495202
ISSNISSN: 0022-3727
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