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Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

AuthorsRomero, M. F.; Sanz, M. M.; Tanarro, Isabel ; Jiménez, A.; Muñoz, E.
KeywordsElectronics and devices
Instrumentation and measurement
Surfaces, interfaces and thin films
Plasma physics
Issue Date23-Nov-2010
PublisherInstitute of Physics Publishing
CitationJournal of Physics D: Applied Physics 43,495202 (2010)
AbstractIn this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been analysed by mass spectrometry as a function of the NH3/SiH4 flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.
Description8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.Tv
Publisher version (URL)http://dx.doi.org/10.1088/0022-3727/43/49/495202
ISSNISSN: 0022-3727
Appears in Collections:(CFMAC-IEM) Artículos
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