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Título: | Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition |
Autor: | Romero, M. F.; Sanz, M.M. CSIC ORCID; Tanarro, Isabel CSIC ORCID ; Jiménez, A.; Muñoz, E. | Palabras clave: | Electronics and devices Semiconductors Instrumentation and measurement Surfaces, interfaces and thin films Plasma physics |
Fecha de publicación: | 23-nov-2010 | Editor: | Institute of Physics Publishing | Citación: | Journal of Physics D: Applied Physics 43,495202 (2010) | Resumen: | In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been analysed by mass spectrometry as a function of the NH3/SiH4 flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors. | Descripción: | 8 pages, 10 figures.-- PACS: 52.70.-m; 81.65.Rv; 81.15.Gh; 52.77.Dq; 52.75.-d, 85.30.Tv | Versión del editor: | http://dx.doi.org/10.1088/0022-3727/43/49/495202 | URI: | http://hdl.handle.net/10261/30614 | DOI: | 10.1088/0022-3727/43/49/495202 | ISSN: | ISSN: 0022-3727 |
Aparece en las colecciones: | (CFMAC-IEM) Artículos |
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Romero et al - SiN PECVD.pdf | 325,75 kB | Adobe PDF | Visualizar/Abrir |
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