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dc.contributor.authorLuque López, Antonio-
dc.contributor.authorFlores, Fernando-
dc.contributor.authorMartí Vega, Antonio-
dc.contributor.authorConesa Cegarra, José Carlos-
dc.contributor.authorWahnón Benarroch, Perla-
dc.contributor.authorOrtega Mateo, José-
dc.contributor.authorTablero, César-
dc.contributor.authorPérez, Rubén-
dc.contributor.authorCuadra, Lucas-
dc.date.accessioned2010-11-26T08:52:57Z-
dc.date.available2010-11-26T08:52:57Z-
dc.date.issued2000-12-21-
dc.identifier.citationWO 00/77829 A2es_ES
dc.identifier.urihttp://hdl.handle.net/10261/29545-
dc.descriptionFecha de presentacion internacional:09.06.2000.- Titulares: Universidad Politecnica de Madrid.- Consejo Superior de Investigaciones Científicas (CSIC).- Universidad Autónoma de Madrid.es_ES
dc.description.abstractThe invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, which is located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6, 7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to the improvement of photovoltaic devices.es_ES
dc.language.isospaes_ES
dc.rightsopenAccesses_ES
dc.titleIntermediate band semiconductor photovoltaic solar celles_ES
dc.title.alternativeCelula solar fotvoltaica de semiconductor de banda intermedia.es_ES
dc.typepatentees_ES
dc.description.peerreviewedPeer reviewedes_ES
Appears in Collections:(ICP) Patentes
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