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The role of stress anisotropy in quantum wire and quantum dot formation

AuthorsSilveira, Juan Pedro ; González Sagardoy, María Ujué ; García Martínez, Jorge Manuel ; González Sotos, Luisa ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando
Issue DateDec-2002
PublisherInstitute of Electrical and Electronics Engineers
CitationInternational Conference on Molecular Beam Epitaxy: 303-304 (2002)
AbstractStress relaxation during growth of lattice-mismatched III-V compounds can induce the formation of nanostructures. For interfaces where group-V changes, the formation of either quantum wires or quantum dots has been associated with group-V element exchange process [1]. We demonstrate the importance of the stress anisotropy of the surface structure for the formation of quantum dots or wires.
Description2 páginas, 3 figuras.-- Comunicación oral presentada a la XII International Conference on Molecular Beam Epitaxy, MBE-XII, celebrada en San Francisco (EEUU) del 15 al 20 de Septiembre de 2002.
Publisher version (URL)http://dx.doi.org/10.1109/MBE.2002.1037880
Appears in Collections:(IMN-CNM) Libros y partes de libros
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