English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/29093
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: in situ stress measurements

AuthorsGarcía Martínez, Jorge Manuel ; González Sotos, Luisa ; González Sagardoy, María Ujué ; Silveira, Juan Pedro ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando
KeywordsQuantum wires
Stress relaxation
Molecular beam epitaxy
Issue DateJul-2001
PublisherElsevier
CitationJournal of Crystal Growth 227-228: 975-979 (2001)
AbstractWe report in situ and in real time quantitative measurements of stress along [1 1 0] and directions during the formation of InAs/InP(0 0 1) quantum wires (QWr) and consequent stress relaxation. Results show a strong stress anisotropy due to the distortion of As–In bonds along [1 1 0] and As–As dimerization along [1 1 0]. This anisotropy is claimed to be the origin of QWr formation instead of self-assembled quantum dots. Anisotropic stress relaxation associated to QWr formation is shown to be characteristic of heteroepitaxial systems involving different group V elements grown by MBE under group V stabilized surface (2×4 reconstruction).
Description12 páginas, 4 figuras.-- PACS: 68.35.-p, 85.30.Vw, 68.35.Ct, 81.15.Hi.-- PDF pre-print.
Publisher version (URL)http://dx.doi.org/10.1016/S0022-0248(01)00962-9
URIhttp://hdl.handle.net/10261/29093
DOI10.1016/S0022-0248(01)00962-9
ISSN0022-0248
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
j_crystal_growth_227_975_2001.pdf80,27 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.