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InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: in situ stress measurements

AuthorsGarcía Martínez, Jorge Manuel ; González Sotos, Luisa ; González Sagardoy, María Ujué ; Silveira, Juan Pedro ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando
KeywordsQuantum wires
Stress relaxation
Molecular beam epitaxy
Issue DateJul-2001
CitationJournal of Crystal Growth 227-228: 975-979 (2001)
AbstractWe report in situ and in real time quantitative measurements of stress along [1 1 0] and directions during the formation of InAs/InP(0 0 1) quantum wires (QWr) and consequent stress relaxation. Results show a strong stress anisotropy due to the distortion of As–In bonds along [1 1 0] and As–As dimerization along [1 1 0]. This anisotropy is claimed to be the origin of QWr formation instead of self-assembled quantum dots. Anisotropic stress relaxation associated to QWr formation is shown to be characteristic of heteroepitaxial systems involving different group V elements grown by MBE under group V stabilized surface (2×4 reconstruction).
Description12 páginas, 4 figuras.-- PACS: 68.35.-p, 85.30.Vw, 68.35.Ct, 81.15.Hi.-- PDF pre-print.
Publisher version (URL)http://dx.doi.org/10.1016/S0022-0248(01)00962-9
Appears in Collections:(IMN-CNM) Artículos
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