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Optical characterisation of self assembled GaxIn1-xAs/InP quantum wires

AuthorsBiswas, Dipankar; Alén, Benito ; Martínez Pastor, Juan Pascual ; González Sotos, Luisa ; García Martínez, Jorge Manuel
Issue DateApr-2002
PublisherThe International Society for Optics and Photonics
CitationProceedings of SPIE 4746: 1267-1270 (2002)
AbstractPhotoluminescence measurements as a function of temperature (30 - 300K) have been carried out on self assembled GaXIn1-XAs / InP (x=0, 0.05, 0.15) quantum wires.The nanostructures emerge when the thickness of the deposited , strained GaX In 1-X As layer exceeds the critical thickness for 2D growth on InP substrates. Atomic Force Microscopy (AFM ) images show how the regular structure and perfection of the wires are lost as the amount of Ga in the alloy increases, which is also reflected in the corresponding PL spectra. The energy and envelope of the PL spectra change with the Gallium content of the alloy. This leads to the fact that the emission energy can be tuned in the range of 1.48 -1.72 μm, an interesting range for optoelectronics, by changing the Gallium content of the alloy. A new striking feature is observed in the PL spectra. The temperature dependence of the PL spectra is strongly dependent on the Gallium content of the alloy. When x=0.15 the P1 spectra becomes almost temperature invariant. This inference is highly relevant for temperature stable optical sources. The paper reports and discusses these interesting observations.
Description4 páginas, 3 figuras, 1 tabla.-- Trabajo presentado en el Congreso: "Eleventh International Workshop on the Physics of Semicondcutor Devices" (Nueva Delhi) Diciembre 2001, Editors: Vikram Kumar, P. K. Basu.
Appears in Collections:(IMN-CNM) Libros y partes de libros
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