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Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure

AuthorsWellmann, P. J.; García Martínez, Jorge Manuel ; Feng, J. L.; Petroff, Pierre M.
KeywordsGallium arsenide
III-V semiconductors
Issue Date30-Nov-1998
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 73(22): 3291-3293 (1998)
AbstractWe report the observation of a giant magnetoresistance effect in a low-temperature (LT-)GaAs/MnAs nanoscale ferromagnet hybrid structure. The MnAs nanomagnets are formed by ion implantation of Mn into LT GaAs and subsequent annealing. We have studied the magnetotransport using a vertically biased p+-GaAs/LT-GaAs:MnAs/p+-GaAs structure. A negative magnetoresistance (Δρ/ρ = [ρ(B)−ρ(0)]/ρ(0)) of up to −80% (B = 7 T) is observed at low temperatures (T<20 K), which changes its sign from negative to positive between T = 15 K and T = 20 K. The value of the positive magnetoresistance decreases with increasing temperature from +115% (20 K) to +1.4% (300 K). The magnetoresistance variations with B and T are correlated with the nanomagnet spacing in the structure.
Description3 páginas, 3 figuras, 1 tabla.
Publisher version (URL)http://dx.doi.org/10.1063/1.122748
Appears in Collections:(IMN-CNM) Artículos
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