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Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

AuthorsMaimon, S.; Finkman, E.; Bahir, G.; Schacham, S. E.; García Martínez, Jorge Manuel ; Petroff, Pierre M.
KeywordsIndium compounds
Gallium arsenide
Issue Date5-Oct-1998
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 73(14): 2003-2005 (1998)
AbstractThermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate.
Description3 páginas, 3 figuras.-- PACS: 85.60.Gz, 85.35.Be
Publisher version (URL)http://dx.doi.org/10.1063/1.122349
Appears in Collections:(IMN-CNM) Artículos
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