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Intermixing and shape changes during the formation of InAs self-assembled quantum dots

AuthorsGarcía Martínez, Jorge Manuel ; Medeiros-Ribeiro, Gilberto; Schmidt, K. H.; Ngo, T.; Feng, J. L.; Lorke, Axel; Kotthaus, Jörg P.; Petroff, Pierre M.
KeywordsIndium compounds
Gallium arsenide
Issue Date1997
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 71(14): 2014-2016 (1997)
AbstractThe initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects.
Description3 páginas, 3 figuras, 1 tabla.
Publisher version (URL)http://dx.doi.org/10.1063/1.119772
Appears in Collections:(IMN-CNM) Artículos
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