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Título: | Intermixing and shape changes during the formation of InAs self-assembled quantum dots |
Autor: | García Martínez, Jorge Manuel CSIC ORCID CVN ; Medeiros-Ribeiro, Gilberto; Schmidt, K. H.; Ngo, T.; Feng, J. L.; Lorke, Axel; Kotthaus, Jörg P.; Petroff, Pierre M. | Palabras clave: | Indium compounds Gallium arsenide |
Fecha de publicación: | 1997 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 71(14): 2014-2016 (1997) | Resumen: | The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects. | Descripción: | 3 páginas, 3 figuras, 1 tabla. | Versión del editor: | http://dx.doi.org/10.1063/1.119772 | URI: | http://hdl.handle.net/10261/29012 | DOI: | 10.1063/1.119772 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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http___scitation.aip.org_getpdf_servletdoi=10.1063_1.pdf | 1,81 MB | Adobe PDF | Visualizar/Abrir |
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