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Título : Intermixing and shape changes during the formation of InAs self-assembled quantum dots
Autor : García Martínez, Jorge Manuel, Medeiros-Ribeiro, Gilberto, Schmidt, K. H., Ngo, T., Feng, J. L., Lorke, Axel, Kotthaus, Jörg P., Petroff, Pierre M.
Palabras clave : Indium compounds
Gallium arsenide
Fecha de publicación : 1997
Editor: American Institute of Physics
Resumen: The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects.
Descripción : 3 páginas, 3 figuras, 1 tabla.
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ISSN: 0003-6951
DOI: 10.1063/1.119772
Citación : Applied Physics Letters 71(14): 2014-2016 (1997)
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