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Open Access item Intermixing and shape changes during the formation of InAs self-assembled quantum dots
|Authors:||García, Jorge M.|
Schmidt, K. H.
Feng, J. L.
Kotthaus, Jörg P.
Petroff, Pierre M.
|Keywords:||Indium compounds, Gallium arsenide|
|Publisher:||American Institute of Physics|
|Citation:||Applied Physics Letters 71(14): 2014-2016 (1997)|
|Abstract:||The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the  direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects.|
|Description:||3 páginas, 3 figuras, 1 tabla.|
|Publisher version (URL):||http://dx.doi.org/10.1063/1.119772|
|Appears in Collections:||(IMM-CNM) Artículos|
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