English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/29011
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Size quantization effects in InAs self-assembled quantum dots

AuthorsSchmidt, K. H.; Medeiros-Ribeiro, Gilberto; García Martínez, Jorge Manuel ; Petroff, Pierre M.
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots,
Issue Date1997
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 70(13): 1727-1729 (1997)
AbstractWe study size quantization effects in InAs self-assembled quantum dots (QDs) that are embedded in GaAs. Using capacitance, photoluminescence and photovoltage spectroscopy, we correlate the measured quantized level energies with the quantum dot sizes and densities obtained from transmission electron microscopy. With increasing dot size, we observe a strong redshift of the QD features in all our data. In the capacitance spectra, a band gap renormalization of the two-dimensional wetting layer system appears when the first excited QD state crosses the wetting layer ground state. The relative size dependence and absolute energetic position of the QD transitions determined with photoluminescence provide some information about the influence of lateral confinement and height of the QD.
Description3 páginas, 3 figuras. PACS: 73.21.-b; 78.55.Cr; 78.66.Fd; 72.40.+w; 68.35.Ct; 73.40.Kp
Publisher version (URL)http://dx.doi.org/10.1063/1.118682
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
http___scitation.aip.org_doi=10.1063_1.pdf64,29 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.