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dc.contributor.authorDubois, Mathieu-
dc.contributor.authorJiménez, David-
dc.contributor.authorAndrés, Pedro L. de-
dc.contributor.authorRoche, Stephan-
dc.date.accessioned2008-01-29T14:17:24Z-
dc.date.available2008-01-29T14:17:24Z-
dc.date.issued2007-
dc.identifier.citationPhys. Rev. B 76, 115337 (2007)en_US
dc.identifier.urihttp://hdl.handle.net/10261/2760-
dc.description.abstractWe report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and non-equilibrium Greens function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi2(111)/Si(111) and MSi2(111)/Si(100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role fo different materials in configurations relevant for heterostructure nanowires.en_US
dc.description.sponsorshipFinanced by CICYT MAT-2005-3866, MEC TEC-2006-13731-C02-01/MIC and EU (contract num. 015783 NODE)en_US
dc.format.extent158427 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsopenAccessen_US
dc.subjectBallistic Electron Emission Microscopyen_US
dc.subjectMOSFETen_US
dc.titleMultiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injectionen_US
dc.typeartículoen_US
dc.description.peerreviewedPeer revieweden_US
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