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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/27421
Title: Gallium self-diffusion in gallium phosphide
Authors: Wang, Lei; Volk, A.; Hsu, L.; Haller, E. E.; Erickson, J. W.; Cardona, M.; Ruf, T.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando
Keywords: Gallium compounds
Secondary ion mass spectra
Issue Date: 3-Feb-1997
Publisher: American Institute of Physics
Citation: Applied Physics Letters 70(14): 1831-1833 (1997)
Abstract: Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D=2.0 cm2 s−1 exp(−4.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 kB.
Publisher version (URL): http://dx.doi.org/10.1063/1.118705
URI: http://hdl.handle.net/10261/27421
ISSN: 0003-6951 (Print)
1077-3118 (Online)
DOI: 10.1063/1.118705
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