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Gallium self-diffusion in gallium phosphide

AuthorsWang, Lei; Volk, A.; Hsu, L.; Haller, E. E.; Erickson, J. W.; Cardona, M.; Ruf, T.; Silveira, Juan Pedro ; Briones Fernández-Pola, Fernando
KeywordsGallium compounds
Secondary ion mass spectra
Issue Date3-Feb-1997
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 70(14): 1831-1833 (1997)
AbstractGa self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D=2.0 cm2 s−1 exp(−4.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 kB.
Publisher version (URL)http://dx.doi.org/10.1063/1.118705
Appears in Collections:(IMN-CNM) Artículos
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