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Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

AuthorsCastrillo, Pedro ; Armelles Reig, Gaspar ; Silveira, Juan Pedro ; Briones Fernández-Pola, Fernando ; Barbolla, J.
KeywordsGallium arsenide
Gallium compounds
III-V semiconductors
Semiconductor quantum wells
Issue Date8-Sep-1997
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 71(10) : 1353-1355(1997)
AbstractWe have studied the optical phonons of GaAs quantum wells strained to GaP. The phonon frequencies have been measured by Raman spectroscopy. The results have been compared with calculations based on the linear chain model and the random isoamplitude model. The comparison suggests a certain degree of atomic intermixing at the interfaces, mainly due to a limited but measurable arsenic carry-over during growth.
Publisher version (URL)http://dx.doi.org/10.1063/1.119891
Appears in Collections:(IMN-CNM) Artículos
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