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dc.contributor.authorPostigo, Pablo Aitor-
dc.contributor.authorArmelles Reig, Gaspar-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.date.accessioned2010-09-03T09:34:13Z-
dc.date.available2010-09-03T09:34:13Z-
dc.date.issued1998-10-15-
dc.identifier.citationPhysical Review B 58(15) : 9653-9661 (1998)en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10261/27415-
dc.description.abstractThe surface optical properties of GaAs on GaP-strained layers have been analyzed in situ by chemical modulation spectroscopy. A clear surface-related optical transition has been identified, and the effect of strain on this transition has been studied, showing a blueshift of 30 meV even for epitaxies as thin as 1 ML of GaAs deposited on top of GaP. This small shift is consistent with a transition between dimer states and dangling-bond states of the Ga-Ga dimers.en_US
dc.description.sponsorshipThis work was partially supported by a CICYT MAT95- 0966-c02-01 Research Action.en_US
dc.format.extent62306 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsopenAccessen_US
dc.subjectSurface optical propertiesen_US
dc.subjectGaAsen_US
dc.titleStrain effects on the surface optical transitions of GaAsen_US
dc.typeartículoen_US
dc.identifier.doi10.1103/PhysRevB.58.9659-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.58.9659en_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
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item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeartículo-
item.cerifentitytypePublications-
item.grantfulltextopen-
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