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Title

Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures

AuthorsPrieto, J. A.; Armelles Reig, Gaspar ; Utzmeier, T.; Briones Fernández-Pola, Fernando ; Ferrer, Juan Carlos; Peiró, F.; Cornet, A.; Morante, J. R.
KeywordsQuantum dot structures
InSb
Issue Date2-Feb-1998
PublisherAmerican Physical Society
CitationPhysical Review Letters 80 (5) : 1094-1097 (1998)
AbstractStrain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E1 and E1+Δ1 transitions.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevLett.80.1094
URIhttp://hdl.handle.net/10261/27413
DOI10.1103/PhysRevLett.80.1094
ISSN0031-9007
Appears in Collections:(IMN-CNM) Artículos
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