English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/27413
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures

AuthorsPrieto, J. A.; Armelles Reig, Gaspar ; Utzmeier, T.; Briones Fernández-Pola, Fernando ; Ferrer, Juan Carlos; Peiró, F.; Cornet, A.; Morante, J. R.
KeywordsQuantum dot structures
Issue Date2-Feb-1998
PublisherAmerican Physical Society
CitationPhysical Review Letters 80 (5) : 1094-1097 (1998)
AbstractStrain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E1 and E1+Δ1 transitions.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevLett.80.1094
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
strain-induced.pdf433 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.