Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/27335
Share/Impact:
Título : Growth and characterization of (InSb)m(InP)n short period superlattices
Autor : Postigo, Pablo Aitor, Briones Fernández-Pola, Fernando, Castrillo, Pedro, Sanz-Hervás, A., Aguilar, M., Abril, E. J.
Palabras clave : Indium compounds
III-V semiconductors,
Fecha de publicación : 1997
Editor: American Institute of Physics
Citación : Applied Physics Letters 70(22) : 3017-3019 (1997)
Resumen: Short period superlattices of (InSb)m(InP)n were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations, provided information about intermixing at the interfaces
Versión del editor: http://dx.doi.org/10.1063/1.118735
URI : http://hdl.handle.net/10261/27335
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.118735
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
File Description SizeFormat 
growth.pdf69,22 kBAdobe PDFView/Open
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.