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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/27335
Title: Growth and characterization of (InSb)m(InP)n short period superlattices
Authors: Postigo, Pablo Aitor ; Briones Fernández-Pola, Fernando ; Castrillo, Pedro ; Sanz-Hervás, A.; Aguilar, M.; Abril, E. J.
Keywords: Indium compounds
III-V semiconductors,
Issue Date: 1997
Publisher: American Institute of Physics
Citation: Applied Physics Letters 70(22) : 3017-3019 (1997)
Abstract: Short period superlattices of (InSb)m(InP)n were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations, provided information about intermixing at the interfaces
Publisher version (URL): http://dx.doi.org/10.1063/1.118735
URI: http://hdl.handle.net/10261/27335
DOI: 10.1063/1.118735
ISSN: 0003-6951 (print)
1077-3118 (online)
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