Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/27321
Share/Impact:
Título : Electrical and optical properties of Be doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy
Autor : Postigo, Pablo Aitor, Dotor, María Luisa, Huertas, P., García-Pérez, Fernando, Golmayo, Dolores, Briones Fernández-Pola, Fernando
Palabras clave : Indium compounds,
Semiconductor epitaxial layers
Beryllium, III-V semiconductors,
Hall effect
Fecha de publicación : 1999
Editor: American Institute of Physics
Citación : Journal of Applied Physics 85(9) : 6567-6570 (1999)
Resumen: Beryllium-doped InP layers have been grown by solid source atomic layer molecular beam epitaxy at low substrate temperature. The residual n-type doping was reduced by controlling both the amplitude and the length of the phosphorus pulse. We have shown a well controlled p-type doping and obtained a hole concentration in the range 4×1017–3×1019 cm−3 at room temperature. The electrical and optical properties of InP layers grown at low temperatures were investigated by Hall effect and photoluminescence (PL) measurements. PL spectra for lightly doped samples have a near band emission at 1.41 eV and Be-related emissions around 1.38 eV.
Versión del editor: http://dx.doi.org/10.1063/1.370503
URI : http://hdl.handle.net/10261/27321
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.370503
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
File Description SizeFormat 
electrical.pdf125,86 kBAdobe PDFView/Open
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.