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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/27321
Title: Electrical and optical properties of Be doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy
Authors: Postigo, Pablo Aitor ; Dotor, María Luisa ; Huertas, P.; García-Pérez, Fernando ; Golmayo, Dolores; Briones Fernández-Pola, Fernando
Keywords: Indium compounds,
Semiconductor epitaxial layers
Beryllium, III-V semiconductors,
Hall effect
Issue Date: 1999
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 85(9) : 6567-6570 (1999)
Abstract: Beryllium-doped InP layers have been grown by solid source atomic layer molecular beam epitaxy at low substrate temperature. The residual n-type doping was reduced by controlling both the amplitude and the length of the phosphorus pulse. We have shown a well controlled p-type doping and obtained a hole concentration in the range 4×1017–3×1019 cm−3 at room temperature. The electrical and optical properties of InP layers grown at low temperatures were investigated by Hall effect and photoluminescence (PL) measurements. PL spectra for lightly doped samples have a near band emission at 1.41 eV and Be-related emissions around 1.38 eV.
Publisher version (URL): http://dx.doi.org/10.1063/1.370503
URI: http://hdl.handle.net/10261/27321
DOI: 10.1063/1.370503
ISSN: 0021-8979 (print)
1089-7550 (online)
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