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Título: | Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/GaAs Quantum Dots |
Autor: | Kegel, I.; Metzger, T. H.; Lorke, Axel; Peisl, J.; Stangl, J.; Bauer, G.; García Martínez, Jorge Manuel CSIC ORCID CVN ; García Martínez, Jorge Manuel CSIC ORCID CVN ; Petroff, Pierre M. | Fecha de publicación: | 21-ago-2000 | Editor: | American Physical Society | Citación: | Physical Review Letters 85, 1694–1697 (2000) | Resumen: | Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top. | Versión del editor: | http://dx.doi.org/10.1103/PhysRevLett.85.1694 | URI: | http://hdl.handle.net/10261/26048 | DOI: | 10.1103/PhysRevLett.85.1694 | ISSN: | 0163-1829 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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p1694_1.pdf | 605,42 kB | Adobe PDF | Visualizar/Abrir |
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