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Solid-source molecular-beam epitaxy for monolithic integration of laser emitters and photodetectors on GaAs chips

AuthorsPostigo, Pablo Aitor ; Fonstad, C. G.; Choi, S.; Goodhue, W. D.
KeywordsOptoelectronic devices
Molecular beam epitaxial growth
Gallium arsenide
Semiconductor lasers
Integrated circuits
Light sources
Metal-semiconductor-metal structures
Issue Date4-Dec-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 77, 3842 (2000)
AbstractA solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side emitting laser (IPSELs) devices on foundry available GaAs integrated circuits (IC) chips with integrated metal–semiconductor–metal photodetectors. The GaAs IC chips were cleaned at low temperature (470 °C) by monoatomic hydrogen prior to epitaxy. Br2 reactive ion etching was used after growth to make laser facets and parabolic mirrors for vertical emission. Using these techniques, we obtained laser emission from the integrated IPSEL devices, suggesting that these devices may be an alternative approach to that offered by vertical cavity surface emitting lasers in the fabrication of optoelectronic integrated devices.
Publisher version (URL)http://dx.doi.org/10.1063/1.1331350
Appears in Collections:(IMN-CNM) Artículos
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