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Title

Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

AuthorsPaskov, P. P.; Holtz, P. O.; Monemar, B.; García Martínez, Jorge Manuel ; García Martínez, Jorge Manuel ; Schoenfeld, W. V.; Petroff, Pierre M.
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Photoluminescence
Self-assembly
Two-photon processes
Issue Date7-Aug-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 77, 812 (2000)
AbstractWe report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states.
Publisher version (URL)http://dx.doi.org/10.1063/1.1306653
URIhttp://hdl.handle.net/10261/25750
DOI10.1063/1.1306653
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos
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