English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/25750
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots

AuthorsPaskov, P. P.; Holtz, P. O.; Monemar, B.; García Martínez, Jorge Manuel ; García Martínez, Jorge Manuel ; Schoenfeld, W. V.; Petroff, Pierre M.
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Two-photon processes
Issue Date7-Aug-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 77, 812 (2000)
AbstractWe report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step two-photon absorption process involving quantum dot states.
Publisher version (URL)http://dx.doi.org/10.1063/1.1306653
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Paskov, P.P. et al Appl. Phys. Lett._77_2000.pdf43,02 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.