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Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

AuthorsGonzález Sagardoy, María Ujué ; González Díez, Yolanda ; González Sotos, Luisa
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Stress relaxation
Molecular beam epitaxial growth
Semiconductor growth
Stress-strain relations
Issue Date25-Nov-2002
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 81, 4162 (2002)
AbstractStrain evolution during In0.2Ga0.8As/GaAs (001) growth by molecular beam epitaxy has been monitored in real time. We have detected that three main relaxation stages, related to different mechanisms, take place during growth, and we have obtained the thickness range where those mechanisms are active. The in situ measured relaxation behavior in the plastic stages has been described by means of a simple equilibrium model that takes into account dislocations generation and interaction between them. The excellent agreement between the experimental data and the model allows us to determine the value of the formation energy per unit length of a misfit dislocation and the extent of the interaction between dislocations in this material system.
Publisher version (URL)http://dx.doi.org/10.1063/1.1524303
Appears in Collections:(IMN-CNM) Artículos
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