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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Jiménez-Jorquera, Cecilia | - |
dc.contributor.author | Orozco, Jahir | - |
dc.contributor.author | Baldi Coll, Antonio | - |
dc.date.accessioned | 2010-06-10T09:25:13Z | - |
dc.date.available | 2010-06-10T09:25:13Z | - |
dc.date.issued | 2010-06-10T09:25:13Z | - |
dc.identifier.citation | Sesonrs 10: 61-83 (2010) | - |
dc.identifier.issn | 1424-8220 | - |
dc.identifier.uri | http://hdl.handle.net/10261/25146 | - |
dc.description.abstract | The use of microsensors for in-field monitoring of environmental parameters is gaining interest due to their advantages over conventional sensors. Among them microsensors based on semiconductor technology offer additional advantages such as small size, robustness, low output impedance and rapid response. Besides, the technology used allows integration of circuitry and multiple sensors in the same substrate and accordingly they can be implemented in compact probes for particular applications e.g., in situ monitoring and/or on-line measurements. In the field of microsensors for environmental applications, Ion Selective Field Effect Transistors (ISFETs) have a special interest. They are particularly helpful for measuring pH and other ions in small volumes and they can be integrated in compact flow cells for continuous measurements. In this paper the technologies used to fabricate ISFETs and a review of the role of ISFETs in the environmental field are presented. | en_US |
dc.description.sponsorship | Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT) and MICINN Project (ref.TEC2007-68012-C03-01) | en_US |
dc.format.extent | 396847 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | en_US |
dc.publisher | Multidisciplinary Digital Publishing Institute | - |
dc.rights | openAccess | - |
dc.subject | ISFETs | en_US |
dc.subject | microsensors | en_US |
dc.subject | environmental monitoring | en_US |
dc.title | ISFET Based Microsensors for Environmental Monitoring | en_US |
dc.type | artículo | - |
dc.identifier.doi | 10.3390/s100100061 | - |
dc.description.peerreviewed | Peer reviewed | en_US |
dc.relation.publisherversion | http://dx.doi.org/10.3390/s100100061 | en_US |
dc.identifier.pmid | 22315527 | - |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.languageiso639-1 | en | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
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36-2010-Sensors-ISFETs reveiw.pdf | 387,55 kB | Adobe PDF | Visualizar/Abrir |
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