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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/23894
Title: High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes
Authors: Butun, B.; Biyikli, N.; Kimukin, I.; Aytur, O.; Ozbay, E.; Postigo, Pablo Aitor ; Silveira, Juan Pedro ; Alija, Alfonso R.
Keywords: Gallium arsenide
Aluminium compounds
Performance evaluation
Issue Date: 24-May-2004
Publisher: American Institute of Physics
Citation: Applied Physics Letters 84, 4185 (2004)
Abstract: We report the design, growth, fabrication, and characterization of GaAs-based high-speed p–i–n photodiodes operating at 1.55 μm. A low-temperature-grown GaAs (LT-GaAs) layer was used as the absorption layer and the photoresponse was selectively enhanced at 1.55 μm using a resonant-cavity-detector structure. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror. Molecular-beam epitaxy was used for wafer growth, where the active LT-GaAs layer was grown at a substrate temperature of 200 °C. The fabricated devices exhibited a resonance around 1548 nm. When compared to the efficiency of a conventional single-pass detector, an enhancement factor of 7.5 was achieved. Temporal pulse-response measurements were carried out at 1.55 μm. Fast pulse responses with 30 ps pulse-width and a corresponding 3 dB bandwidth of 11.2 GHz was measured.
Publisher version (URL): http://dx.doi.org/10.1063/1.1756208
URI: http://hdl.handle.net/10261/23894
DOI: 10.1063/1.1756208
ISSN: 0003-6951
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