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Título : Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Autor : Rodríguez-Fernández, J., Carcelén, V., Hidalgo, P., Vijayan, N., Piqueras, J., Sochinskii, N. V., Pérez, J. M., Diéguez, E.
Palabras clave : Cadmium compounds
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
Fecha de publicación : 18-Aug-2009
Editor: American Institute of Physics
Resumen: Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
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ISSN: 0021-8979
DOI: 10.1063/1.3197031
Citación : Journal of Applied Physics 106, 044901 (2009)
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