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Open Access item Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

Authors:Rodríguez-Fernández, J.
Carcelén, V.
Hidalgo, P.
Vijayan, N.
Piqueras, J.
Sochinskii, N. V.
Pérez, J. M.
Diéguez, E.
Keywords:Cadmium compounds, Cathodoluminescence, Crystal growth from melt, Doping profiles, Electrical resistivity, II-VI semiconductors, Indium, Semiconductor doping, Semiconductor growth, Vacancies (crystal), X-ray chemical analysis, Zinc compounds
Issue Date:18-Aug-2009
Publisher:American Institute of Physics
Citation:Journal of Applied Physics 106, 044901 (2009)
Abstract:Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
Publisher version (URL):http://link.aip.org
Appears in Collections:(IMM-CNM) Artículos

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