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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/23646
Title: Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Authors: Rodríguez-Fernández, J.; Carcelén, V.; Hidalgo, P.; Vijayan, N.; Piqueras, J.; Sochinskii, N. V.; Pérez, J. M.; Diéguez, E.
Keywords: Cadmium compounds
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
Issue Date: 18-Aug-2009
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 106, 044901 (2009)
Abstract: Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
Publisher version (URL): http://link.aip.org
URI: http://hdl.handle.net/10261/23646
DOI: 10.1063/1.3197031
ISSN: 0021-8979
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