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Open Access item Microstructural improvements of InP on GaAs „001… grown by molecular

Authors:Morales, F. M.
García García, Ricardo
Molina, Sergio I.
Aouni, A.
Postigo, Pablo Aitor
Fonstad, C. G.
Keywords:Dislocations, Electron diffraction, Hydrogenation, III-V semiconductors, Indium compounds, Molecular beam epitaxial growth, Rapid thermal annealing, Semiconductor epitaxial layers, Semiconductor growth, Stacking faults, Transmission electron microscopy
Issue Date:30-Jan-2009
Publisher:American Institute of Physics
Citation:Appl. Phys. Lett. 94, 041919 (2009)
Abstract:The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.
Publisher version (URL):http://link.aip.org
http://dx.doi.org/10.1063/1.3077610
URI:http://hdl.handle.net/10261/23579
ISSN:0003-6951
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Appears in Collections:(IMM-CNM) Artículos

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