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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/23579
Title: Microstructural improvements of InP on GaAs „001… grown by molecular
Authors: Morales, F. M.; García García, Ricardo; Molina, Sergio I.; Aouni, A.; Postigo, Pablo Aitor ; Fonstad, C. G.
Keywords: Dislocations
Electron diffraction
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Rapid thermal annealing
Semiconductor epitaxial layers
Semiconductor growth
Stacking faults
Transmission electron microscopy
Issue Date: 30-Jan-2009
Publisher: American Institute of Physics
Citation: Appl. Phys. Lett. 94, 041919 (2009)
Abstract: The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.
Publisher version (URL): http://link.aip.org
URI: http://hdl.handle.net/10261/23579
DOI: 10.1063/1.3077610
ISSN: 0003-6951
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