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Microstructural improvements of InP on GaAs „001… grown by molecular

AuthorsMorales, F. M.; García García, Ricardo ; Molina, Sergio I.; Aouni, A.; Postigo, Pablo Aitor ; Fonstad, C. G.
Electron diffraction
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Rapid thermal annealing
Semiconductor epitaxial layers
Semiconductor growth
Stacking faults
Transmission electron microscopy
Issue Date30-Jan-2009
PublisherAmerican Institute of Physics
CitationAppl. Phys. Lett. 94, 041919 (2009)
AbstractThe characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.
Publisher version (URL)http://link.aip.org
Appears in Collections:(IMN-CNM) Artículos
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