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Título : Microstructural improvements of InP on GaAs „001… grown by molecular
Autor : Morales, F. M., García García, Ricardo, Molina, Sergio I., Aouni, A., Postigo, Pablo Aitor, Fonstad, C. G.
Palabras clave : Dislocations
Electron diffraction
Hydrogenation
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Rapid thermal annealing
Semiconductor epitaxial layers
Semiconductor growth
Stacking faults
Transmission electron microscopy
Fecha de publicación : 30-Jan-2009
Editor: American Institute of Physics
Citación : Appl. Phys. Lett. 94, 041919 (2009)
Resumen: The characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.
Versión del editor: http://link.aip.org
http://dx.doi.org/10.1063/1.3077610
URI : http://hdl.handle.net/10261/23579
ISSN: 0003-6951
DOI: 10.1063/1.3077610
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