Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/23507
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Título : High resolution electron microscopy of GaAs capped GaSb nanostructures
Autor : Molina, Sergio I., Beltrán, A. M., Ben, Teresa, Galindo, P. L., Guerrero, Elisa, Taboada, A. G., Ripalda, José María, Chisholm, M. F.
Palabras clave : Gallium arsenide
Gallium compounds
III-V semiconductors
Nanostructured materials
Nanotechnology
Scanning-transmission electron microscopy
Semiconductor epitaxial layers
Semiconductor growth
Fecha de publicación : 29-Jan-2009
Editor: American Institute of Physics
Citación : Applied Physics Letters 94, 043114 (2009)
Resumen: We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.
Versión del editor: http://link.aip.org
http://dx.doi.org/10.1063/1.3077009
URI : http://hdl.handle.net/10261/23507
ISSN: 0003-6951
DOI: 10.1063/1.3077009
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