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Title: High resolution electron microscopy of GaAs capped GaSb nanostructures
Authors: Molina, Sergio I., Beltrán, A. M., Ben, Teresa, Galindo, P. L., Guerrero, Elisa, Taboada, A. G., Ripalda, José María, Chisholm, M. F.
Keywords: Gallium arsenide
Gallium compounds
III-V semiconductors
Nanostructured materials
Scanning-transmission electron microscopy
Semiconductor epitaxial layers
Semiconductor growth
Issue Date: 29-Jan-2009
Publisher: American Institute of Physics
Abstract: We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.
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ISSN: 0003-6951
???metadata.dc.identifier.doi???: 10.1063/1.3077009
Citation: Applied Physics Letters 94, 043114 (2009)
Appears in Collections:(IMM-CNM) Artículos
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