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High resolution electron microscopy of GaAs capped GaSb nanostructures

AuthorsMolina, Sergio I.; Beltrán, A. M.; Ben, Teresa; Galindo, P. L.; Guerrero, Elisa; Taboada, Alfonso G.; Ripalda, José María ; Chisholm, M. F.
KeywordsGallium arsenide
Gallium compounds
III-V semiconductors
Nanostructured materials
Scanning-transmission electron microscopy
Semiconductor epitaxial layers
Semiconductor growth
Issue Date29-Jan-2009
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 94, 043114 (2009)
AbstractWe show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.
Publisher version (URL)http://link.aip.org
Appears in Collections:(IMN-CNM) Artículos
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