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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/23507
Title: High resolution electron microscopy of GaAs capped GaSb nanostructures
Authors: Molina, Sergio I.; Beltrán, A. M.; Ben, Teresa; Galindo, P. L.; Guerrero, Elisa; Taboada, A. G.; Ripalda, José María; Chisholm, M. F.
Keywords: Gallium arsenide
Gallium compounds
III-V semiconductors
Nanostructured materials
Scanning-transmission electron microscopy
Semiconductor epitaxial layers
Semiconductor growth
Issue Date: 29-Jan-2009
Publisher: American Institute of Physics
Citation: Applied Physics Letters 94, 043114 (2009)
Abstract: We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.
Publisher version (URL): http://link.aip.org
URI: http://hdl.handle.net/10261/23507
ISSN: 0003-6951
DOI: 10.1063/1.3077009
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