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Open Access item High resolution electron microscopy of GaAs capped GaSb nanostructures

Authors:Molina, Sergio I.
Beltrán, A. M.
Ben, Teresa
Galindo, P. L.
Guerrero, Elisa
Taboada, A. G.
Ripalda, José María
Chisholm, M. F.
Keywords:Gallium arsenide, Gallium compounds, III-V semiconductors, Nanostructured materials, Nanotechnology, Scanning-transmission electron microscopy, Semiconductor epitaxial layers, Semiconductor growth
Issue Date:29-Jan-2009
Publisher:American Institute of Physics
Citation:Applied Physics Letters 94, 043114 (2009)
Abstract:We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1−x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1−x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.
Publisher version (URL):http://link.aip.org
http://dx.doi.org/10.1063/1.3077009
URI:http://hdl.handle.net/10261/23507
ISSN:0003-6951
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Appears in Collections:(IMM-CNM) Artículos

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