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Resonant photoemission in Cr silicide at the absorption energy Cr2p

AuthorsGalán, L.; García, Mariano; Ripalda, José María ; Montero Herrero, Isabel; Román García, Elisa Leonor ; Batchelor, D. R.; Bressler, P. R.
KeywordsChromium compounds
Silicon compounds
Valence bands
Auger effect
Issue Date31-May-2004
PublisherAmerican Institute of Physics
CitationApplied Physics Letters, 84, 4433 (2004
AbstractValence band photoemission has been measured in chromium silicide as a function of the photon energy near the Cr 2p3/2 absorption threshold. Evidence of resonant photoemission is observed for the 3d valence band and the two-hole satellite. The threshold for normal Auger regime is 2.8 eV below the absorption peak and 0.8 eV below the Cr 2p3/2 binding energy, even lower than in pure Cr metal where it is already at extreme levels. The requirement for good resolution in photon energy relative to absorption width for the resonant Raman Auger to be observed is found to be less restrictive than expected.
Publisher version (URL)http://link.aip.org
Appears in Collections:(IMN-CNM) Artículos
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