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Título: | Resonant photoemission in Cr silicide at the absorption energy Cr2p |
Autor: | Galán, L.; García, Mariano; Ripalda, José María CSIC ORCID ; Montero, Isabel CSIC ORCID ; Román García, Elisa Leonor CSIC; Batchelor, D. R.; Bressler, P. R. | Palabras clave: | Chromium compounds Silicon compounds Photoemission Valence bands Resonance Auger effect |
Fecha de publicación: | 31-may-2004 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters, 84, 4433 (2004 | Resumen: | Valence band photoemission has been measured in chromium silicide as a function of the photon energy near the Cr 2p3/2 absorption threshold. Evidence of resonant photoemission is observed for the 3d valence band and the two-hole satellite. The threshold for normal Auger regime is 2.8 eV below the absorption peak and 0.8 eV below the Cr 2p3/2 binding energy, even lower than in pure Cr metal where it is already at extreme levels. The requirement for good resolution in photon energy relative to absorption width for the resonant Raman Auger to be observed is found to be less restrictive than expected. | Versión del editor: | http://link.aip.org http://dx.doi.org/10.1063/1.1758779 |
URI: | http://hdl.handle.net/10261/23441 | DOI: | 10.1063/1.1758779 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Galán, L. et al Appl.Phys.Lett._84_2004.pdf | 63,45 kB | Adobe PDF | Visualizar/Abrir |
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