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Título

Flexible Antiferromagnetic FeRh Tapes as Memory Elements

AutorFina, Ignasi CSIC ORCID CVN ; Dix, Nico CSIC ORCID; Menéndez, Enric CSIC ORCID; Crespi, Anna CSIC; Foerster, Michael; Aballe, Lucía; Sánchez Barrera, Florencio CSIC ORCID; Fontcuberta, Josep CSIC ORCID
Palabras claveFlexible electronics
FeRh
Flexible magnets
Thin films
Antiferromagnetic spintronics
Fecha de publicación1-abr-2020
EditorAmerican Chemical Society
CitaciónACS Applied Materials and Interfaces 12(13): 15389-15395 (2020)
ResumenThe antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.
Versión del editorhttp://dx.doi.org/10.1021/acsami.0c00704
URIhttp://hdl.handle.net/10261/230312
ISSN1944-8244
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