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Título : Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes
Autor : Muñoz-Matutano, G., Canet-Ferrer, J., Alonso-González, Pablo, Alén, Benito, Fernández-Martínez, Iván, Martín-Sánchez, Javier, Fuster, David, Martínez-Pastor, Juan, González Díez, Yolanda, Briones Fernández-Pola, Fernando, González Sotos, Luisa
Palabras clave : Quantum dot molecules
Droplet epitaxi
Microphotoluminiscence
Fecha de publicación : 2010
Editor: Institute of Physics Publishing
Citación : Journal of Physics: Conference Series 210(1): 012028 (2010)
Resumen: We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.
Descripción : Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.
Versión del editor: http://dx.doi.org/10.1088/1742-6596/210/1/012028
URI : http://hdl.handle.net/10261/22854
ISSN: 1742-6588
DOI: 10.1088/1742-6596/210/1/012028
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