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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/22854
Title: Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes
Authors: Muñoz-Matutano, G.; Canet-Ferrer, J.; Alonso-González, Pablo; Alén, Benito; Fernández-Martínez, Iván; Martín-Sánchez, Javier; Fuster, David; Martínez-Pastor, Juan; González Díez, Yolanda; Briones Fernández-Pola, Fernando; González Sotos, Luisa
Keywords: Quantum dot molecules
Droplet epitaxi
Issue Date: 2010
Publisher: Institute of Physics Publishing
Citation: Journal of Physics: Conference Series 210(1): 012028 (2010)
Abstract: We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.
Description: Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.
Publisher version (URL): http://dx.doi.org/10.1088/1742-6596/210/1/012028
URI: http://hdl.handle.net/10261/22854
ISSN: 1742-6588
DOI: 10.1088/1742-6596/210/1/012028
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