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dc.contributor.authorGontard, Lionel C.es_ES
dc.contributor.authorLeñero-Bardallo, Juan A.es_ES
dc.contributor.authorVarela-Feria, Francisco M.es_ES
dc.contributor.authorCarmona-Galán, R.es_ES
dc.date.accessioned2021-01-20T10:12:58Z-
dc.date.available2021-01-20T10:12:58Z-
dc.date.issued2020-
dc.identifier.citationIEEE International Symposium on Circuits and Systems (ISCAS). 2020es_ES
dc.identifier.urihttp://hdl.handle.net/10261/227127-
dc.description.abstractThis paper reports the use of vertically stacked photodiodes as compact solid-state spectrometers for transmission scanning electron microscopy. SEM microscopes operate by illuminating the sample with accelerated electrons. They can have one or more solid-state sensors. In this work we have tested a set of stacked photodiodes fabricated in a standard 180nm HV-CMOS technology without process modifications. We have measured their sensitivity to electron irradiation in the energy range between 10keV and 30keV. We have also assessed their radiation hardness. The experiments are compared with Monte Carlo simulations to investigate their spectral sensitivityes_ES
dc.language.isoenges_ES
dc.publisherInstitute of Electrical and Electronics Engineerses_ES
dc.relation.isversionofPostprintes_ES
dc.rightsopenAccesses_ES
dc.subjectPhotodiodeses_ES
dc.subjectSilicones_ES
dc.subjectScanning electron microscopyes_ES
dc.subjectSensitivityes_ES
dc.subjectSemiconductor diodeses_ES
dc.subjectElectron beamses_ES
dc.titleVertically Stacked CMOS-compatible Photodiodes for Scanning Electron Microscopyes_ES
dc.typecomunicación de congresoes_ES
dc.identifier.doihttp://dx.doi.org/10.1109/ISCAS45731.2020.9181208-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttps://doi.org/10.1109/ISCAS45731.2020.9181208es_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
Appears in Collections:(IMSE-CNM) Comunicaciones congresos
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