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Título: | Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets |
Autor: | Papadopoulos, Nikos; Flores, Eduardo CSIC ORCID; Watanabe, Kenji; Taniguchi, Takashi; Ares, José R.; Sánchez, Carlos ; Ferrer, Isabel J.; Castellanos-Gómez, Andrés CSIC ORCID ; Steele, Gary A.; Zant, Herre S. J. van der | Fecha de publicación: | 2020 | Editor: | IOP Publishing | Citación: | 2D Materials 7(1): 015009 (2020) | Resumen: | We have studied electrical transport as a function of carrier density, temperature and bias in multiterminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate. | Versión del editor: | http://dx.doi.org/10.1088/2053-1583/ab4ef3 | URI: | http://hdl.handle.net/10261/225045 | DOI: | 10.1088/2053-1583/ab4ef3 | Identificadores: | doi: 10.1088/2053-1583/ab4ef3 e-issn: 2053-1583 |
Aparece en las colecciones: | (ICMM) Artículos (IMN-CNM) Artículos |
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Multiterminal electronic transpory in boron nitride_accepted.pdf | 1,82 MB | Adobe PDF | Visualizar/Abrir |
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